- Hersteller :
- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
- Ausgewählter Filter :
3 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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Ein Angebot |
401
Verfügbar auf Lager
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Fairchild Semiconductor | IGBT Transistors FS3 650V SHD prolferation | Through Hole | TO-3PN | + 175 C | Tube | 268 W | Single | 650 V | 2.28 V | 100 A | +/- 400 nA | +/- 30 V | |||
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siehe | Infineon Technologies | IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 300 W | Single | 1.2 kV | 2.28 V | 60 A | +/- 20 V | |||||
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siehe | Infineon Technologies | IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT | Through Hole | TO-247AD-3 | + 150 C | Tube | 300 W | 1200 V | 2.28 V | 60 A | +/- 100 nA | +/- 20 V |
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