- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
15
Verfügbar auf Lager
|
Infineon Technologies | IGBT Transistors 600V TRENCH IGBT ULTRAFAST | Through Hole | TO-247-3 | + 175 C | Tube | 750 W | Single | 600 V | 2.2 V | 240 A | 400 nA | +/- 20 V | ||
|
|
siehe | Infineon Technologies | IGBT Transistors 1200V 100A GAR CH | Screw | IS4 (34 mm )-5 | + 150 C | 625 W | Single | 1200 V | 2.5 V | 100 A | 400 nA | +/- 20 V |
1 / 1 Seite
