- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
siehe | Littelfuse | IGBT Modules 1200V 150A Dual | IGBT Silicon Modules | Package S | + 125 C | Bulk | 625 W | Dual | 1200 V | 1.7 V | 200 A | 400 nA | |||
|
|
siehe | Littelfuse | IGBT Modules 1700V 50A IGBT | IGBT Silicon Modules | Package S | + 125 C | Bulk | 320 W | Half Bridge | 1700 V | 2 V | 75 A | 400 nA | |||
|
|
|
siehe | Littelfuse | IGBT Modules 1200V 100A Dual | IGBT Silicon Modules | Package S | + 125 C | Bulk | 450 W | Dual | 1200 V | 1.7 V | 140 A | 400 nA | |||
|
|
siehe | Littelfuse | IGBT Modules 1700V 100A IGBT | IGBT Silicon Modules | Package S | + 125 C | Bulk | 620 W | Half Bridge | 1700 V | 2 V | 150 A | 400 nA | |||
|
|
siehe | Littelfuse | IGBT Modules 1700V 75A IGBT | IGBT Silicon Modules | Package S | + 125 C | Bulk | 520 W | Half Bridge | 1700 V | 2 V | 125 A | 400 nA |
1 / 1 Seite
