Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Package / Case :
Pd - Power Dissipation :
Configuration :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
7 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Product Package / Case Maximum Operating Temperature Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current
Default Photo
1+
$75.6880
5+
$73.8240
10+
$72.0440
25+
$69.4280
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules D3-11 + 125 C 1.25 kW Dual 600 V 1.5 V 500 A 400 nA
Default Photo
50+
$64.9040
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules D4-5 + 125 C 2.3 kW Single 600 V 1.5 V 1 kA 3.1 uA
Default Photo
50+
$49.5840
100+
$46.2600
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules D3-11 + 125 C 1.25 kW Single 600 V 1.5 V 500 A 400 nA
Default Photo
50+
$44.4200
100+
$41.4400
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules D3-11 + 125 C 940 W Single 600 V 1.5 V 400 A 400 nA
Default Photo
50+
$44.4200
100+
$41.4400
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules D3-11 + 125 C 940 W Single 600 V 1.5 V 400 A 400 nA
Default Photo
50+
$56.4880
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules D3-11 + 125 C 940 W Dual 600 V 1.5 V 400 A 400 nA
Default Photo
50+
$49.5840
100+
$46.2600
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules D3-11 + 125 C 1.25 kW Single 600 V 1.5 V 500 A 400 nA