- Pd - Power Dissipation :
- Configuration :
- Gate-Emitter Leakage Current :
- Ausgewählter Filter :
7 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.25 kW | Dual | 600 V | 1.5 V | 500 A | 400 nA | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D4-5 | + 125 C | 2.3 kW | Single | 600 V | 1.5 V | 1 kA | 3.1 uA | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.25 kW | Single | 600 V | 1.5 V | 500 A | 400 nA | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 940 W | Single | 600 V | 1.5 V | 400 A | 400 nA | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 940 W | Single | 600 V | 1.5 V | 400 A | 400 nA | ||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 940 W | Dual | 600 V | 1.5 V | 400 A | 400 nA | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.25 kW | Single | 600 V | 1.5 V | 500 A | 400 nA |
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