- Package / Case :
- Maximum Operating Temperature :
- Configuration :
- Ausgewählter Filter :
7 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP1-12 | + 100 C | 357 W | Dual | 1.2 kV | 1.7 V | 110 A | 400 nA | ||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 125 C | 357 W | Full Bridge | 1.2 kV | 1.7 V | 110 A | 400 nA | ||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 125 C | 357 W | Single | 1.2 kV | 1.7 V | 110 A | 400 nA | ||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 125 C | 357 W | Single | 1.2 kV | 1.7 V | 110 A | 400 nA | ||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 125 C | 357 W | Dual | 1.2 kV | 1.7 V | 110 A | 400 nA | ||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 357 W | Dual | 1.2 kV | 1.7 V | 110 A | 400 nA | ||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP2-18 | + 100 C | 357 W | Dual | 1.2 kV | 1.7 V | 110 A | 400 nA |
1 / 1 Seite