- Hersteller :
- Package / Case :
- Maximum Operating Temperature :
- Configuration :
- Collector-Emitter Saturation Voltage :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 833 W | Dual | 1.2 kV | 1.7 V | 220 A | 400 nA | |||
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siehe | Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | INT-A-PAK | + 150 C | 833 W | 1.2 kV | 1.9 V | 200 A | 400 nA | |||||
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siehe | Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | INT-A-PAK | + 150 C | 833 W | 1.2 kV | 1.77 V | 200 A | 400 nA | |||||
|
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|
siehe | Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | INT-A-PAK | + 150 C | 833 W | Half Bridge | 1.2 kV | 1.9 V | 200 A | 400 nA |
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