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Configuration :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
5 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Product Package / Case Maximum Operating Temperature Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current
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1+
$136.2080
5+
$132.9280
10+
$129.6280
25+
$127.8120
siehe
RFQ
Infineon Technologies IGBT Modules 1700V 150A 3-PHASE IGBT Silicon Modules EconoPACK+ + 125 C 1.05 kW Hex 1700 V 2 V 240 A 400 nA
Default Photo
50+
$51.0120
100+
$47.5920
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules D3-11 + 125 C 1.05 kW Single 1.2 kV 1.7 V 300 A 400 nA
Default Photo
50+
$51.0120
100+
$47.5920
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules D3-11 + 125 C 1.05 kW Single 1.2 kV 1.7 V 300 A 400 nA
Default Photo
50+
$68.6640
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules D3-11 + 125 C 1.05 kW Dual 1.2 kV 1.7 V 300 A 400 nA
Default Photo
10+
$37.2080
30+
$35.9640
100+
$33.4880
siehe
RFQ
Infineon Technologies IGBT Modules 1200V 200A DUAL   IS5a ( 62 mm )-7 + 125 C 1.05 kW Dual 1200 V 1.7 V 200 A 400 nA