- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Ausgewählter Filter :
11 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6-P | + 100 C | 350 W | 3-Phase | 1.2 kV | 1.7 V | 100 A | 400 nA | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6-P | + 100 C | 480 W | 3-Phase | 600 V | 1.5 V | 225 A | 400 nA | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6-P | + 100 C | 250 W | Triple Dual Common Source | 600 V | 1.5 V | 100 A | 600 nA | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6-P | + 100 C | 350 W | Triple Dual Common Source | 1.2 kV | 1.7 V | 100 A | 400 nA | ||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6-P | + 100 C | 480 W | Triple Dual Common Source | 600 V | 1.5 V | 225 A | 400 nA | ||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6-P | + 100 C | 176 W | Triple Dual Common Source | 600 V | 1.5 V | 80 A | 600 nA | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6-P | + 100 C | 310 W | Triple Dual Common Source | 1.7 kV | 2 V | 70 A | 400 nA | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6-P | + 100 C | 250 W | 3-Phase | 600 V | 1.5 V | 100 A | 600 nA | ||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6-P | + 100 C | 176 W | 3-Phase | 600 V | 1.5 V | 80 A | 600 nA | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6-P | + 100 C | 340 W | Triple Dual Common Source | 600 V | 1.5 V | 150 A | 400 nA | ||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6-P | + 100 C | 480 W | 3-Phase | 1.2 kV | 1.7 V | 140 A | 400 nA |
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