- Pd - Power Dissipation :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Ausgewählter Filter :
7 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D4-5 | + 125 C | 2.9 kW | Single | 1.7 kV | 2 V | 1.1 kA | 400 nA | |||
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Ein Angebot |
50
Verfügbar auf Lager
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D4-5 | + 125 C | 2.5 kW | Single | 1.2 kV | 1.7 V | 900 A | 400 nA | ||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D4-5 | + 125 C | 2.3 kW | Single | 600 V | 1.5 V | 1 kA | 3.1 uA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D4-5 | + 125 C | 2.08 kW | Single | 1.7 kV | 2 V | 800 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D4-5 | + 125 C | 3 kW | Single | 1.2 kV | 1.8 V | 910 A | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D4-5 | + 125 C | 1.785 kW | Single | 1.2 kV | 1.7 V | 650 A | 600 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D4-5 | + 125 C | 2.082 kW | Single | 1.2 kV | 1.8 V | 610 A |
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