- Pd - Power Dissipation :
- Gate-Emitter Leakage Current :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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siehe | Infineon Technologies | IGBT Modules 1200V 200A DUAL | IGBT Silicon Modules | Half Bridge2 | + 150 C | 1.4 kW | Half Bridge | 1200 V | 2.5 V | 290 A | 400 nA | |||
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siehe | Infineon Technologies | IGBT Modules 1200V 100A DUAL | IGBT Silicon Modules | Half Bridge2 | + 150 C | 800 W | Half Bridge | 1200 V | 2.5 V | 150 A | 200 nA | |||
|
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siehe | Infineon Technologies | IGBT Modules 1200V 150A DUAL | IGBT Silicon Modules | Half Bridge2 | + 150 C | 1.25 kW | Half Bridge | 1200 V | 2.5 V | 210 A | 320 nA |
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