- Hersteller :
- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
siehe | Infineon Technologies | IGBT Modules HYBRID PACK2 | IGBT Silicon Modules | HybridPack2 | + 150 C | 1250 W | 3-Phase | 650 V | 1.4 V | 530 A | 400 nA | |||
|
|
siehe | Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | INT-A-PAK | + 175 C | 1.6 kW | Half Bridge | 600 V | 1.6 V | 530 A | 400 nA | ||||
|
|
|
siehe | Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | INT-A-PAK | + 150 C | 1.136 kW | Half Bridge | 600 V | 1.24 V | 530 A | +/- 200 nA | ||||
|
|
|
siehe | Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | INT-A-PAK | + 150 C | 2.119 kW | Half Bridge | 1.2 kV | 3.1 V | 530 A | 400 nA |
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