- Hersteller :
- Package / Case :
- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Ausgewählter Filter :
17 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
siehe | Infineon Technologies | IGBT Modules N-CH 1.7KV 110A | IGBT Silicon Modules | 34MM | + 150 C | Dual | 1700 V | 110 A | ||||||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP1-12 | + 100 C | 357 W | Dual | 1.2 kV | 1.7 V | 110 A | 400 nA | |||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 125 C | 357 W | Full Bridge | 1.2 kV | 1.7 V | 110 A | 400 nA | |||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 125 C | 357 W | Single | 1.2 kV | 1.7 V | 110 A | 400 nA | |||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP1-12 | + 100 C | 385 W | Single | 1.2 kV | 1.85 V | 110 A | 600 nA | |||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 385 W | Full Bridge | 1.2 kV | 1.85 V | 110 A | 600 nA | |||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 125 C | 357 W | Single | 1.2 kV | 1.7 V | 110 A | 400 nA | |||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 385 W | Dual | 1.2 kV | 1.8 V | 110 A | 600 nA | |||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP1-12 | + 100 C | 385 W | Dual | 1.2 kV | 1.85 V | 110 A | 600 nA | |||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 125 C | 357 W | Dual | 1.2 kV | 1.7 V | 110 A | 400 nA | |||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 357 W | Dual | 1.2 kV | 1.7 V | 110 A | 400 nA | |||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP1-12 | + 100 C | 385 W | Single | 1.2 kV | 1.85 V | 110 A | 600 nA | |||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP2-18 | + 100 C | 357 W | Dual | 1.2 kV | 1.7 V | 110 A | 400 nA | |||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 385 W | Dual | 1.2 kV | 1.85 V | 110 A | 600 nA | |||||
|
siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 385 W | Dual | 1.2 kV | 1.85 V | 110 A | 600 nA | |||||
|
siehe | Vishay | IGBT Modules 110 Amp 1200 Volt Half-Bridge | IGBT Silicon Modules | INT-A-PAK | + 150 C | Bulk | Dual | 1200 V | 110 A | |||||||
|
Ein Angebot |
40
Verfügbar auf Lager
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP1-12 | + 100 C | 416 W | Dual | 600 V | 2 V | 110 A | +/- 150 nA |
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