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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
17 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Product Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current
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1+
$33.7440
5+
$33.1240
10+
$31.6320
25+
$30.5760
siehe
RFQ
Infineon Technologies IGBT Modules N-CH 1.7KV 110A IGBT Silicon Modules 34MM + 150 C     Dual 1700 V   110 A  
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50+
$29.1720
100+
$28.3840
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP1-12 + 100 C   357 W Dual 1.2 kV 1.7 V 110 A 400 nA
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50+
$51.9720
100+
$47.5560
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP4 + 125 C   357 W Full Bridge 1.2 kV 1.7 V 110 A 400 nA
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50+
$30.0880
100+
$29.0200
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP4 + 125 C   357 W Single 1.2 kV 1.7 V 110 A 400 nA
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50+
$19.5200
100+
$19.0640
250+
$18.6640
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP1-12 + 100 C   385 W Single 1.2 kV 1.85 V 110 A 600 nA
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50+
$40.8640
100+
$38.1240
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP3-32 + 100 C   385 W Full Bridge 1.2 kV 1.85 V 110 A 600 nA
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50+
$30.0880
100+
$29.0200
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP4 + 125 C   357 W Single 1.2 kV 1.7 V 110 A 400 nA
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50+
$28.9600
100+
$27.9320
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP3-32 + 100 C   385 W Dual 1.2 kV 1.8 V 110 A 600 nA
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50+
$26.0720
100+
$25.3680
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP1-12 + 100 C   385 W Dual 1.2 kV 1.85 V 110 A 600 nA
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50+
$39.7320
100+
$37.0680
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP4 + 125 C   357 W Dual 1.2 kV 1.7 V 110 A 400 nA
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50+
$30.6360
100+
$29.5480
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP3-32 + 100 C   357 W Dual 1.2 kV 1.7 V 110 A 400 nA
Default Photo
50+
$19.5200
100+
$19.0640
250+
$18.6640
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP1-12 + 100 C   385 W Single 1.2 kV 1.85 V 110 A 600 nA
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50+
$28.0280
100+
$27.2680
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP2-18 + 100 C   357 W Dual 1.2 kV 1.7 V 110 A 400 nA
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50+
$29.0680
100+
$28.0360
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP3-32 + 100 C   385 W Dual 1.2 kV 1.85 V 110 A 600 nA
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50+
$29.0680
100+
$28.0360
siehe
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP3-32 + 100 C   385 W Dual 1.2 kV 1.85 V 110 A 600 nA
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15+
$40.2400
30+
$38.7240
60+
$38.2000
105+
$34.3640
siehe
RFQ
Vishay IGBT Modules 110 Amp 1200 Volt Half-Bridge IGBT Silicon Modules INT-A-PAK + 150 C Bulk   Dual 1200 V   110 A  
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1+
$18.2240
2+
$17.7320
5+
$17.2400
10+
$16.7480
Ein Angebot
RFQ
40
Verfügbar auf Lager
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP1-12 + 100 C   416 W Dual 600 V 2 V 110 A +/- 150 nA