- Hersteller :
- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Ausgewählter Filter :
7 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
10
Verfügbar auf Lager
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Infineon Technologies | IGBT Modules IGBT Module 150A 1700V | IGBT Silicon Modules | 62 mm | + 150 C | 1100 W | Dual | 1700 V | 2.45 V | 250 A | 100 nA | |||
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siehe | Infineon Technologies | IGBT Modules | IGBT Silicon Modules | HybridPack1 | + 150 C | 790 W | 3-Phase | 650 V | 1.7 V | 250 A | 400 nA | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 890 W | Full Bridge | 1.7 kV | 2 V | 250 A | 600 nA | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 890 W | Dual | 1.7 kV | 2 V | 250 A | 600 nA | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 890 W | Single | 1.7 kV | 2 V | 250 A | 600 nA | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 890 W | Single | 1.7 kV | 2 V | 250 A | 600 nA | ||||
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siehe | Littelfuse | IGBT Modules 1700V 150A IGBT | IGBT Silicon Modules | Package D | + 125 C | Bulk | 890 W | Half Bridge | 1700 V | 2 V | 250 A | 400 nA |
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