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| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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siehe | Infineon Technologies | IGBT Modules 1200V 75A DUAL | IGBT Silicon Modules | Half Bridge1 | + 150 C | 625 W | Half Bridge | 1200 V | 2.5 V | 105 A | 320 nA |
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