- Hersteller :
- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Gate-Emitter Leakage Current :
- Ausgewählter Filter :
9 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Ein Angebot |
7
Verfügbar auf Lager
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Infineon Technologies | IGBT Modules HYBRID PACK 2 | IGBT Silicon Modules | HybirdPack2 | + 150 C | Tray | 1500 W | Single | 650 V | 1.4 V | 800 A | 400 nA | ||
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siehe | Infineon Technologies | IGBT Modules | IGBT Silicon Modules | HybirdPack2 | + 150 C | 1500 W | Single | 650 V | 1.4 V | 800 A | 400 nA | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.75 kW | Single | 600 V | 1.4 V | 550 A | 600 nA | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 2.3 kW | Single | 600 V | 1.4 V | 700 A | 800 nA | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 2.3 kW | Single | 600 V | 1.4 V | 700 A | 800 nA | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.75 kW | Single | 600 V | 1.4 V | 550 A | 600 nA | ||||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.15 kW | Single | 600 V | 1.4 V | 430 A | 500 nA | ||||
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siehe | Infineon Technologies | IGBT Modules | IGBT Silicon Modules | HybirdPack2 | + 150 C | Tray | 1500 W | Single | 650 V | 1.4 V | 800 A | 400 nA | |||
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siehe | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.15 kW | Single | 600 V | 1.4 V | 430 A | 500 nA |
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