Bipolar Transistors - BJT - Inix Electronic

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3 Produkt

Modell	Preis	Anzahl		Lager	Hersteller	Beschreibung	Mounting Style	Package / Case	Maximum Operating Temperature	Series	Configuration	Transistor Polarity	Collector- Emitter Voltage VCEO Max	Emitter- Base Voltage VEBO	Collector-Emitter Saturation Voltage	Maximum DC Collector Current	Gain Bandwidth Product fT
HN1A01F-GR(TE85L,F	1+ $0.1520 10+ $0.0864 100+ $0.0372 1000+ $0.0284 3000+ $0.0216	Ein Angebot	PDF RFQ	4,840 Verfügbar auf Lager	Toshiba	Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A	SMD/SMT	SM-6	+ 125 C	HN1A01	Dual	PNP	50 V	5 V	0.1 V	150 mA	80 MHz
HN1B01F-GR(TE85L,F	1+ $0.2160 10+ $0.1212 100+ $0.0520 1000+ $0.0400 3000+ $0.0304	Ein Angebot	PDF RFQ	5,800 Verfügbar auf Lager	Toshiba	Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A	SMD/SMT	SM-6	+ 125 C	HN1B01	Dual	PNP	50 V	5 V	0.1 V	150 mA	80 MHz
HN1B01F-Y(TE85L,F)	1+ $0.2160 10+ $0.1212 100+ $0.0520 1000+ $0.0400 3000+ $0.0304	Ein Angebot	PDF RFQ	1,910 Verfügbar auf Lager	Toshiba	Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A	SMD/SMT	SM-6	+ 125 C	HN1B01	Dual	PNP	50 V	5 V	0.1 V	150 mA	80 MHz

HN1A01F-GR(TE85L,F

Toshiba

Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A

Stock : 4,840

HN1B01F-GR(TE85L,F

Toshiba

Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A

Stock : 5,800

HN1B01F-Y(TE85L,F)

Toshiba

Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A

Stock : 1,910

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