Bipolar Transistors - BJT - Inix Electronic

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Bild	Modell	Preis	Anzahl		Lager	Hersteller	Beschreibung	Mounting Style	Package / Case	Maximum Operating Temperature	Series	Configuration	Transistor Polarity	Collector- Emitter Voltage VCEO Max	Collector- Base Voltage VCBO	Emitter- Base Voltage VEBO	Collector-Emitter Saturation Voltage	Maximum DC Collector Current	Gain Bandwidth Product fT
	HBDM60V600W-7	1+ $0.1480 10+ $0.1120 100+ $0.0608 1000+ $0.0456 3000+ $0.0392	Ein Angebot	PDF RFQ	5,086 Verfügbar auf Lager	Diodes Incorporated	Bipolar Transistors - BJT 200mW Half H-Bridge	SMD/SMT	SOT-363-6	+ 150 C	HBDM60	Dual	NPN, PNP	- 60 V, + 65 V	- 60 V, + 80 V	- 5.5 V, 6 V	- 0.5 V	0.5 A at NPN, 0.6 A at PNP	100 MHz

HBDM60V600W-7

HBDM60V600W-7

Diodes Incorporated

Bipolar Transistors - BJT 200mW Half H-Bridge

Stock : 5,086

1+: $0.1480

10+: $0.1120

100+: $0.0608

1000+: $0.0456

3000+: $0.0392

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