- Collector-Emitter Saturation Voltage :
- Ausgewählter Filter :
6 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Mounting Style | Package / Case | Maximum Operating Temperature | Series | Configuration | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Maximum DC Collector Current | Gain Bandwidth Product fT | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
1,535
Verfügbar auf Lager
|
Central Semiconductor | Bipolar Transistors - BJT NPN Gen Purp Power | Through Hole | TO-220-3 | + 150 C | TIP29 | NPN | 80 V | 5 V | 0.7 V | 1 A | 3 MHz | ||||
|
Ein Angebot |
1,056
Verfügbar auf Lager
|
Fairchild Semiconductor | Bipolar Transistors - BJT NPN Epitaxial Sil | Through Hole | TO-220-3 | + 150 C | TIP29 | Single | NPN | 40 V | 5 V | 0.7 V | 1 A | 3 MHz | |||
|
Ein Angebot |
308
Verfügbar auf Lager
|
Central Semiconductor | Bipolar Transistors - BJT NPN Gen Purp Power | Through Hole | TO-220-3 | + 150 C | TIP29 | NPN | 60 V | 5 V | 700 mV | 1 A | 3 MHz | ||||
|
Ein Angebot |
203
Verfügbar auf Lager
|
Central Semiconductor | Bipolar Transistors - BJT NPN Gen Purp Power | Through Hole | TO-220-3 | + 150 C | TIP29 | NPN | 40 V | 5 V | 700 mV | 1 A | 3 MHz | ||||
|
Ein Angebot |
225
Verfügbar auf Lager
|
Central Semiconductor | Bipolar Transistors - BJT NPN Gen Purp Power | Through Hole | TO-220-3 | + 150 C | TIP29 | NPN | 100 V | 5 V | 0.7 V | 1 A | 3 MHz | ||||
|
siehe | Micro Commercial Components (MCC) | Bipolar Transistors - BJT 1.0A 40V | Through Hole | TO-220-3 | + 150 C | TIP29 | Single | NPN | 40 V | 5 V | 1 A | 3 MHz |
1 / 1 Seite