- Hersteller :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Peak Wavelength :
- Half Intensity Angle Degrees :
- Ausgewählter Filter :
22 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Product | Vr - Reverse Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Series | Rise Time | Peak Wavelength | Dark Current | Half Intensity Angle Degrees | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
12
Verfügbar auf Lager
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First Sensor | Photodiodes APD with 1.77mm squared active area | Avalanche Photodiodes | 160 V | Through Hole | TO-5i | - 40 C | + 100 C | APD Series 9 | 2 ns | 905 nm | 2 nA | |||
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Ein Angebot |
9
Verfügbar auf Lager
|
First Sensor | Photodiodes High Speed Si APD w/1.3Ghz Amplifier | Avalanche Photodiodes | 200 V | Through Hole | TO-5 | 0 C | + 60 C | APD Series 8 | 350 ps | 800 nm | 0.5 nA | 113 deg | ||
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Ein Angebot |
10
Verfügbar auf Lager
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First Sensor | Photodiodes APD with 0.04mm squared active area | Avalanche Photodiodes | 60 V | Through Hole | TO-52-S1 | - 40 C | + 100 C | APD Series 12 | 0.18 ns | 660 nm | 0.2 nA | |||
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Ein Angebot |
10
Verfügbar auf Lager
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First Sensor | Photodiodes 500um active area APD chip w/ IR | Avalanche Photodiodes | 220 V | Through Hole | TO-5i | - 10 C | + 70 C | 4 ns | 905 nm | 1.5 nA | ||||
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Ein Angebot |
9
Verfügbar auf Lager
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First Sensor | Photodiodes AD500-9-TO52-S1 200-240V | Avalanche Photodiodes | 160 V | Through Hole | TO-52-S1 | - 40 C | + 100 C | APD Series 9 | 550 ps | 905 nm | 0.5 nA | 108 deg | ||
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Ein Angebot |
10
Verfügbar auf Lager
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First Sensor | Photodiodes High Speed Si APD 130um Active Area | Avalanche Photodiodes | 90 V | Through Hole | TO-52-S1 | - 40 C | + 100 C | APD Series 8 | 1 ns | 800 nm | 4 nA | 92 deg | ||
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Ein Angebot |
7
Verfügbar auf Lager
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First Sensor | Photodiodes Si APD Enhanced for 905nm 1130um Area | Avalanche Photodiodes | 180 V | Through Hole | TO-52 | - 40 C | + 100 C | APD Series 9 | 1.3 ns | 905 nm | 4 nA | 92 deg | ||
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Ein Angebot |
12
Verfügbar auf Lager
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First Sensor | Photodiodes APD with 0.2mm squared active area | Avalanche Photodiodes | 60 V | Through Hole | TO-52-S1 | - 40 C | + 100 C | APD Series 12 | 0.35 ns | 660 nm | 0.3 nA | |||
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Ein Angebot |
3
Verfügbar auf Lager
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First Sensor | Photodiodes Si APD Enhanced for 905nm 800um Area | Avalanche Photodiodes | 180 V | Through Hole | TO-52-S1 | - 40 C | + 100 C | APD Series 9 | 0.9 ns | 905 nm | 2 nA | 101 deg | ||
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Ein Angebot |
11
Verfügbar auf Lager
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First Sensor | Photodiodes AD230-9-TO52-S1 200-240V | Avalanche Photodiodes | 160 V | Through Hole | TO-52-S1 | - 40 C | + 100 C | APD Series 9 | 0.55 ns | 905 nm | 0.5 nA | 113 deg | ||
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Ein Angebot |
7
Verfügbar auf Lager
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First Sensor | Photodiodes High Speed Si APD 800um Active Area | Avalanche Photodiodes | 100 V | Through Hole | TO-52-S1 | - 40 C | + 85 C | APD Series 8 | 0.28 ns | 410 nm | 1 nA | 64 deg | ||
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Ein Angebot |
10
Verfügbar auf Lager
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First Sensor | Photodiodes AD100-8-S1 120-160V | Avalanche Photodiodes | 120 V | Through Hole | TO-52-S1 | - 40 C | + 100 C | APD Series 8 | 180 ps | 800 nm | 50 pA | 116 deg | ||
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Ein Angebot |
12
Verfügbar auf Lager
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First Sensor | Photodiodes AD500-8-S1 120-160V | Avalanche Photodiodes | 80 V | Through Hole | TO-52-S1 | - 40 C | + 100 C | APD Series 8 | 350 ps | 800 nm | 0.5 nA | 108 deg | ||
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Ein Angebot |
10
Verfügbar auf Lager
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First Sensor | Photodiodes AD230-8-S1 120-160V | Avalanche Photodiodes | 80 V | Through Hole | TO-52-S1 | - 40 C | + 100 C | APD Series 8 | 180 ps | 800 nm | 0.3 nA | 113 deg | ||
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Ein Angebot |
10
Verfügbar auf Lager
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First Sensor | Photodiodes 800um active area APD chip w/ IR | Avalanche Photodiodes | 220 V | Through Hole | TO-5i | - 15 C | + 70 C | APD Series 10 | 5 ns | 1064 nm | 3 nA | |||
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Ein Angebot |
1
Verfügbar auf Lager
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First Sensor | Photodiodes Si APD Enhanced for 905nm 500um Area | Avalanche Photodiodes | 240 V | Through Hole | TO-5 | 0 C | + 60 C | APD Series 9 | 550 ps | 905 nm | 0.5 nA | 113 deg | ||
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siehe | CEL | Photodiodes InGaAs APD COAXIAL PACKAGE | Avalanche Photodiodes | 70 V | Through Hole | Coaxial | - 40 C | + 85 C | 1550 nm | 5 nA | ||||||
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Ein Angebot |
1
Verfügbar auf Lager
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First Sensor | Photodiodes 1500um active area APD chip w/ IR | Avalanche Photodiodes | 220 V | Through Hole | TO-5i | - 15 C | + 70 C | APD Series 10 | 5 ns | 1064 nm | 7 nA | |||
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Ein Angebot |
11
Verfügbar auf Lager
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First Sensor | Photodiodes High Speed Si APD 1950um Active Area | Avalanche Photodiodes | 200 V | Through Hole | TO-5 | - 40 C | + 100 C | APD Series 8 | 1.4 ns | 800 nm | 15 nA | 96 deg | ||
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siehe | First Sensor | Photodiodes High Speed Si APD w/2.3Ghz | Avalanche Photodiodes | 200 V | Through Hole | TO-5 | 0 C | + 60 C | APD Series 8 | 180 ps | 800 nm | 0.3 nA | 116 deg | |||
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siehe | First Sensor | Photodiodes Si APD Enhanced for 905nm 3mm Area | Avalanche Photodiodes | 160 V | Through Hole | TO-5i | - 40 C | + 100 C | APD Series 9 | 2 ns | 905 nm | 30 nA | ||||
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siehe | First Sensor | Photodiodes Si APD Enhanced for 905nm 230um Area | Avalanche Photodiodes | 160 V | Through Hole | TO-5 | 0 C | + 60 C | APD Series 9 | 500 ps | 905 nm | 0.5 nA | 116 deg |
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